MANUFACTURING METHOD OF FUNCTIONAL ELEMENT OF SEMICONDUCTOR DEVICE Russian patent published in 2020 - IPC H01L21/205 C23C16/22 B82B3/00 

FIELD: manufacturing technology.

SUBSTANCE: method of manufacturing the functional element of the semiconductor device is carried out in a vacuum furnace in two stages, the first of which is carried out heating to a temperature of bases 950–1,400 °C and synthesis of a silicon carbide film on its surface in a gaseous medium, which is an oxide or carbon dioxide or a mixture of carbon dioxide or dioxide with an inert gas and / or nitrogen (and / or silane) at pressure of 20–600 Pa. At second step in vacuum furnace in medium of carbon tetrafluoride at temperature of 1,300–1,400 °C and pressure of 2,500–6,000 Pa carbon nanofilm with a crystal lattice of diamond type is formed from the obtained film of silicon carbide by coordinated replacement of atoms up to complete replacement of silicon atoms by carbon atoms in silicon carbide film obtained at the first stage. Best result is achieved when orientation (111) silicon is used as the base.

EFFECT: obtaining, for the first time, a silicon-based carbon nanocrystalline material with a high-quality diamond type crystal structure by storing a diamond-like type of a crystal lattice in Si→SiC→C conversion.

1 cl, 5 dwg