FIELD: chemistry.
SUBSTANCE: method of producing thin epitaxial layers of β-SiC on monocrystalline silicon includes sputtering a silicon target with SiC by scanning its surface with a laser beam in high vacuum conditions without adding gaseous reagents to the heated substrate. Sputtering is carried out using a laser with radiation wavelength λ=1.06 mcm and output radiation energy of 0.1-0.3 J at residual pressure in a growth chamber of 10-4-10-6 Pa and substrate temperature of 950-1000°C.
EFFECT: obtaining epitaxial layers of silicon carbide with a cubic modification on monocrystalline silicon substrates with a crystal-lattice orientation.
4 dwg
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