ARTICLE CONTAINING A SILICON BASE AND A COATING LAYER IN THE FORM OF A NANOFILM OF CARBON WITH A DIAMOND-TYPE CRYSTAL LATTICE, AND A METHOD OF MAKING SAID ARTICLE Russian patent published in 2020 - IPC H01L21/205 C23C16/22 B82B3/00 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the class of semiconductor devices and can be used in micro-, nano- and optoelectronics. Functional element of the semiconductor device has a base made of silicon with a transition layer formed on it and containing silicon carbide, on which there is a coating layer in the form of a nanofilm of carbon with a crystal lattice of a diamond type. Method of producing the disclosed functional element of a semiconductor device is carried out in a vacuum furnace in two steps, at first of which the base is heated to temperature of 950–1,400 °C and synthesis of silicon carbide film on its surface in gas medium, which is an oxide or carbon dioxide or mixture of oxide or carbon dioxide with inert gas and / or nitrogen at pressure of 20–600 Pa. At the second stage, nanofilm of carbon with crystalline lattice of diamond type is formed in vacuum furnace in medium of carbon tetrafluoride at temperature of 1,300–1,400 °C and pressure of 2,500–6,000 Pa from produced silicon carbide film by coordinated replacement of atoms. Best result is achieved when orientation (111) silicon is used as the base.

EFFECT: obtaining a carbon nanocrystalline material with a diamond-like type crystalline structure of a high-quality on a substrate (base) of silicon by storing a of a diamond-like type crystal lattice when conversion Si→SiC→C.

6 cl, 9 dwg