DEVICE FOR GROWING MONOCRYSTALS Russian patent published in 2018 - IPC C30B13/00 C30B13/24 C30B13/30 

FIELD: technological processes.

SUBSTANCE: invention relates to devices for growing single crystals by the zone melting method with light (radiation) heating and can be used in the field of technical optics. Device comprises radiation source 1 located at focus F1 of main ellipsoidal reflector 2, additional ellipsoidal reflector 3 with focus F2 and movable light shield 4 made in form of a rotation body, for example a disk. Light system is formed by main 2 and additional 3 ellipsoidal reflectors and has intermediate focusing point F3. Line OE which connects focusing points F1, F2 and F3 is the main optical axis of the light system. Consumable polycrystalline rod 5 is located in quartz flask 6 installed at focus F2 of additional ellipsoidal reflector 3. In addition flask 6 contains single crystal 7 to be formed and melting zone 8. Energy flow from radiation source 1 is collected by reflection from main reflector 2 and is directed to additional reflector 3, which concentrates radiation flux at its F2 focus. Consumable polycrystalline rod 5 is located in quartz flask 6. Closer movable light shield 4 is to intermediate focus point F3 of main 2 and additional 3 reflectors, the greater is proportion of energy not falling into the focus of additional reflector 3. At the beginning of the melting process shield 4 moves to the position corresponding to the lowest energy reaching focus F2. After formation of melting zone 8 and formation of single crystal 7, shield 4 moves from intermediate focus point F3. Shield 4 size is chosen equal to 10–25 % of the outer diameter of the main ellipsoidal reflector.

EFFECT: design of the device allows to regulate the melting mode, ensuring the uniformity of heating the melting zone and, consequently, improving the quality of the single crystal and the overall efficiency of the device.

1 cl, 1 dwg