FIELD: growing crystal chips of semiconductors. SUBSTANCE: method involves formation of film structure with substrate, insulator layers, and silicon layer which are made on one or two sides of substrate with homogeneous heating on one side of film structure above 1320 C and below silicon melting point, heating on opposite side by radiation beam focused into narrow band so that half-width of energy distribution crosswise of narrow band on distribution half-amplitude level is at least 0.5 mm; formation of melt region in silicon film, and region displacement. Device implementing this method has displacing package, tubular lamps mounted in package, plate secured above lamps and provided with taper hole, crystal chip attached to plate on side of lamps, pivots with tops placed in taper hole of plate, screen with hole above plate built up of two moving parts, and region heater attached above screen. EFFECT: reduced deformation of film structure at high output. 22 cl, 14 dwg
