FIELD: metallurgy.
SUBSTANCE: invention relates to a method for depositing a film on a substrate. Method comprises depositing a first settling solution containing a first deposited material on a substrate to form a first monolayer of said first deposition material, applying a rinse solution to the first monolayer for a time trinse to form a rinse layer for removing the excess first deposited material, wherein trinse≤10 seconds. Thickness of said rinse layer is reduced to form a residual rinse layer with a thickness of 0 to 5 mcm. Method comprises either application of a second deposition solution containing a second deposited material on said residual rinse layer at a time tdep to form a second monolayer of said second deposited material, wherein said residual rinse layer has a non-zero thickness, or applying said second deposition solution containing said second deposited material to said first monolayer for a time tdep to form said second monolayer of said second deposited material, wherein said residual rinse layer is absent, wherein tdep≤ 10 seconds, wherein said first monolayer and said second monolayer form a double layer.
EFFECT: providing efficient material transfer during layer-by-layer coating, while enabling to control the effects resulting from the application of double layers, such as heterogeneity, interphase mixing between the interfaces of double layers, increased optical haze, high variability in growth rates, and increased surface roughness.
15 cl, 5 dwg, 2 tbl, 7 ex
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Authors
Dates
2018-07-02—Published
2013-09-12—Filed