FIELD: technological processes.
SUBSTANCE: invention relates to metal oxide precursors comprising at least one metal atom selected from the group consisting of In, Ga, Zn and Sn, at least one ligand that cannot be photo-crosslinked and at least one ligand that can be photo-crosslinked. Also provided is a liquid composition for producing a coating on a substrate, comprising at least one said precursor and solvent, and applying said precursor and composition to form structured metal oxide layers.
EFFECT: layers obtained using the precursors of the present invention are suitable for producing conductive, semiconductor or dielectric layers, for example, in thin film transistors or solar photocells.
13 cl, 1 tbl, 2 ex
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