FIELD: chemistry.
SUBSTANCE: invention relates to production of indium oxide-containing layers from an anhydrous solution. In the method, an anhydrous composition, containing at least one indium-halogen-alkoxide of general formula InX(OR) 2 , wherein R is an alkyl and/or alkoxyalkyl residue and X is F, Cl, Br or I, and at least one solvent or dispersion medium, is deposited in a defined sequence in an anhydrous atmosphere on a substrate; the composition deposited on the substrate is irradiated with electromagnetic radiation with wavelength ≤360 nm and optionally dried and then thermally converted into an indium oxide-containing layer. The disclosed method of producing indium oxide-containing layers is suitable for making thin structures, and does not require high energy flux density for a long period of time and high hardware costs.
EFFECT: method enables to form said layers with improved electrical properties.
16 cl, 3 ex
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