FIELD: physics.
SUBSTANCE: invention relates to electronics and can be used to produce thin-film resistors based on tantalum and compounds thereof. Result is achieved by the fact that the method of obtaining a given configuration of film resistors based on tantalum and compounds thereof comprises applying on a resistive film of tantalum and compounds thereof a film of yttrium and forming the configuration using photolithography and selective chemical etching of a film of yttrium and a film of tantalum and compounds thereof, wherein the yttrium film thickness is 0.05–0.1 mcm, and selective chemical etching of resistive films of tantalum and compounds thereof is carried out in solutions based on hydrofluoric acid, and selective chemical etching of yttrium film is carried out in a solution of orthophosphoric acid.
EFFECT: technical result is obtaining a given configuration of film resistors based on tantalum and compounds thereof without undercutting across the resistor width.
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