FIELD: physics.
SUBSTANCE: metal surface is oxidised through deep porous anodic treatment until formation of an oxide film whose thickness ensures reliable electrical insulation of the resistive strain gauge from the metal surface. The oxide film is strengthened by burning in a nitrogen atmosphere. A SiO2 or Ta2O5 layer is deposited in a vacuum and polished to cleanliness level 14. A nichrome layer with the necessary resistivity is deposited on the said SiO2 or Ta2O5 layer through thermal evaporation of nichrome from a crucible in a vacuum. The pattern of the resistance strain gauge is made via thin-film photolithography. An aluminium or copper layer is then deposited. Terminal pads are formed through photolithography and lead wires are welded to the said pads. The finished resistance strain gauge is insulated on top by a SiO2 layer.
EFFECT: simple manufacturing process, reduced labour input of the processes.
4 dwg, 3 ex
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