METHOD FOR MANUFACTURING THIN-FILM RESISTORS Russian patent published in 2003 - IPC

FIELD: electronic engineering. SUBSTANCE: method includes vacuum evaporation of resistive film material onto lot of insulating substrates, annealing of several specimens taken from lot in open air for definite time at several temperatures between 623 and 823 K, cooling of substrates down to room temperature, formation of resistor contact assemblies, measurement of resistance of chosen specimens, selection of optimal temperatures according to data obtained, and annealing of entire lot of substrates in open air under chosen conditions; contact assemblies are formed and resistance of sampled specimens is measured before annealing; desired stability of resistor is recognized by correlation coefficient between resistances before and after annealing, optimal annealing temperature corresponding to maximal correlation coefficient. EFFECT: enhanced yield of resistors suitable for use at heavy loads. 1 cl, 1 tbl