FIELD: microelectronics.
SUBSTANCE: method of manufacturing of high-resistant and low-resistant thin film resistors on the same base, two resistive films are evaporated on the base, first one with high surface resistivity, then one with low surface resistivity, conductor layer and then subsequently form using photolithography first low-resistant resistors, then high-resistant resistors - by selective chemical stripping of low-resistant resistive film from the surface of high-resistant resistive film, the same material is used for high-resistant and low-resistant resistive film, separated by intermediate separating film with surface resistance surpassing surface resistance of high-resistance resistive film. Tantalum film or tantalum nitride film are used as high-resistant and low-resistant resistive film, and yttrium films are used as intermediate separating film.
EFFECT: production of resistive microassemblies as well as powerful resistive HF attenuators containing low-resistant and high-resistant resistors.
2 cl
