FIELD: physics, acoustics.
SUBSTANCE: invention relates to microelectronics and the technology of making surface acoustic wave (SAW) devices. The method of making surface acoustic wave devices includes depositing an aluminium film on a piezoelectric substrate, depositing a film of a valve metal underneath said aluminium film, forming a photoresist mask, electrochemical anodic treatment of aluminium in the gaps between electrodes, removing the formed porous aluminium oxide in a selective chemical etchant, partial conversion by electrochemical anodic treatment of the valve metal film to a valve metal oxide, removing the formed valve metal oxide and the non-anodic treated valve metal film in selective chemical etchants which do have an effect on the aluminium film and the material of the piezoelectric substrate.
EFFECT: making SAW devices with high frequency by preventing formation of non-anodic treated aluminium islands and preventing etching of aluminium electrodes.
6 cl, 2 dwg
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Authors
Dates
2015-02-10—Published
2013-04-02—Filed