FIELD: electrical engineering.
SUBSTANCE: use to estimate the surface recombination rate of nonequilibrium charge carriers of semiconductors. Essence of the invention lies in the fact that the method of estimating the surface recombination rate of nonequilibrium charge carriers in semiconductors such as CdS, based on the dependence of the structure of the photoconductivity spectrum on the magnitude and sign of the electric field strength on the semiconductor surface, it differs in that the surface recombination rate of the semiconductor is determined by the shape of the spectral photocurrent in the region of exciton resonances.
EFFECT: providing the possibility of a simple to implement, free from the restrictions imposed on the characteristics of the semiconductor, the method of determining S.
1 cl, 1 dwg
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