FIELD: physics.
SUBSTANCE: method of producing pin-photodiodes with a guard ring on high-resistivity p-silicon includes thermal oxidation of the initial p-silicon wafer or an epitaxial structure comprising a layer of high-resistivity p-silicon, opening "windows" in the thermal oxide layer, depositing phosphorus atoms into the "windows" and distillation thereof combined with oxidation to form planar n+-p junctions of the operating region and the guard ring region, forming on the reverse side of the wafer a gettering layer and performing gettering, etching the gettering layer and doping the contact region of the base with boron atoms to form a p+-p type ohmic contact, opening in the oxide layer contact "windows" to the operating region and the guard ring and probing dark currents thereof, selecting wafers which do not correspond to given dark current values, etching out the thermal oxide layer therefrom and depositing on the free silicon surface a new protective layer silicon oxide at temperature not higher than 300°C, opening contact "windows" in the deposited layer and re-probing dark currents and if the dark current corresponds to given values, depositing a metal coating, forming a contact pattern and burning in the metal, and if the dark current does not correspond to the given values, repeating the operations until the given dark current values are achieved.
EFFECT: high output of non-defective photodiodes by reducing the level of dark current of the operating region and the guard ring region to given values.
2 cl, 1 tbl
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Authors
Dates
2015-04-20—Published
2013-12-06—Filed