SUPERHIGH-FREQUENCY SIGNAL POWER DIODE DETECTOR Russian patent published in 2019 - IPC G01R21/12 

Abstract RU 2693868 C1

FIELD: physics.

SUBSTANCE: use of microwave electromagnetic signals for detecting power. Essence of the invention is that a diode power detector of ultrahigh frequency signals, including a metal housing, connected to input and output coaxial connectors, between which there is a dielectric plate with a matching circuit arranged thereon, made using thin-film passive elements, which output is connected to first output of semiconductor low-barrier diode, made on gallium arsenide substrate, which second output is connected to low-pass filter formed by capacitor and first resistor, second output of which is connected to central conductor of output coaxial connector, at that, sealed lead-in is introduced, which is connected between input coaxial connector and matching circuit, into which two connected in parallel connected circuits in microstrip version, containing second resistor and adjustable inductance closed on housing, and third resistor connected in series before diode, wherein the diode has a negative voltage piercing of not less than 4 V, a junction capacitance of not more than 50 fF and a video resistance in range of 0.7 to 2.5 kOhm, a forward loss resistance of not more than 40 Ohm.

EFFECT: high accuracy of detecting signals at frequencies of up to 50 GHz.

3 cl, 4 dwg

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RU 2 693 868 C1

Authors

Zagorodnij Andrej Sergeevich

Pavlov Sergej Vladimirovich

Nechaev Vladimir Gennadevich

Dobrikov Aleksandr Ivanovich

Dates

2019-07-05Published

2018-12-07Filed