FIELD: electrical engineering.
SUBSTANCE: invention relates to semiconductor devices. Semiconductor device includes: an insulating substrate, which includes an insulating layer, in which on both surfaces there is a first metal layer and a second metal layer; a semiconductor element provided on the first metal layer; and an external connecting terminal attached to the first metal layer, wherein the outer connecting terminal is electrically isolated from the second metal layer, wherein the first metal layer includes a main portion in contact with the insulating layer, wherein in the main portion there is a semiconductor element and a protruding portion protruding from the main portion, wherein an external connecting terminal is attached to the protruding portion; and at least part of protruding section is provided so that it protrudes from outer peripheral edge of insulating layer, on top view of insulating substrate.
EFFECT: semiconductor device is disclosed.
10 cl, 17 dwg
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