SEMICONDUCTOR DEVICE Russian patent published in 2001 - IPC

FIELD: semiconductor engineering. SUBSTANCE: semiconductor device has carrying board, at least one insulating substrate mounted on this board with at least one conducting member provided on upper surface of substrate whose underside faces carrying board, case accommodating insulating substrate, semiconductor members and/or devices placed inside case. Space between conducting member edge and external edge of insulating substrate is covered with resin or inorganic glass layer; external edge of mentioned space is located between conducting member edge and external edge of insulating substrate; such arrangement provides for high reliability of device with respect to voltage sustained. Three alternatives of semiconductor devices are proposed. EFFECT: improved reliability and high-voltage stability. 11 cl, 27 dwg