SEMICONDUCTOR DEVICE Russian patent published in 2001 - IPC

Abstract RU 2165115 C2

FIELD: semiconductor engineering. SUBSTANCE: semiconductor device has carrying board, at least one insulating substrate mounted on this board with at least one conducting member provided on upper surface of substrate whose underside faces carrying board, case accommodating insulating substrate, semiconductor members and/or devices placed inside case. Space between conducting member edge and external edge of insulating substrate is covered with resin or inorganic glass layer; external edge of mentioned space is located between conducting member edge and external edge of insulating substrate; such arrangement provides for high reliability of device with respect to voltage sustained. Three alternatives of semiconductor devices are proposed. EFFECT: improved reliability and high-voltage stability. 11 cl, 27 dwg

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RU 2 165 115 C2

Authors

Tadao Kushima

Akira Tanaka

Rjuichi Saito

Kazukhiro Suzuki

Eshikhiko Koike

Khideo Shimizu

Dates

2001-04-10Published

1999-05-27Filed