IMAGE ACQUISITION SOLID-STATE DEVICE Russian patent published in 2014 - IPC H01L27/146 

Abstract RU 2521224 C1

FIELD: electricity.

SUBSTANCE: image acquisition solid-state device has the first substrate equipped with a photoelectric transducer at its primary surface, the first structure of wiring layout having the first contact area which contains a conducting material, the second substrate equipped with a part of peripheral circuit having its contact area at its primary surface and the second structure of wiring layout which contains a conducting material. Moreover the first contact area and the second contact area are connected so that the first substrate, the first structure of wiring layout, the second structure of wiring layout and the second substrate are place in the specified order. Besides, the conducting material of the first contact area and the conducting material of the second contact area are surrounded by diffusion-preventing films.

EFFECT: invention provides the image acquisition solid-state device capable to suppress generation of dark current or loss current.

14 cl, 11 dwg

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RU 2 521 224 C1

Authors

Simotsusa Mineo

Dates

2014-06-27Published

2011-07-04Filed