FIELD: electricity.
SUBSTANCE: image acquisition solid-state device has the first substrate equipped with a photoelectric transducer at its primary surface, the first structure of wiring layout having the first contact area which contains a conducting material, the second substrate equipped with a part of peripheral circuit having its contact area at its primary surface and the second structure of wiring layout which contains a conducting material. Moreover the first contact area and the second contact area are connected so that the first substrate, the first structure of wiring layout, the second structure of wiring layout and the second substrate are place in the specified order. Besides, the conducting material of the first contact area and the conducting material of the second contact area are surrounded by diffusion-preventing films.
EFFECT: invention provides the image acquisition solid-state device capable to suppress generation of dark current or loss current.
14 cl, 11 dwg
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Authors
Dates
2014-06-27—Published
2011-07-04—Filed