FIELD: physics.
SUBSTANCE: vertical structure of semiconductor device includes substrate forming essentially horizontal plane, gate electrode with vertical side wall and vertically protruding from substrate, washer attached from one side from vertical side wall, semiconductor nanotube between gate electrode and washer and essentially vertically protruding between its opposite first and second ends, gate dielectric on vertical side wall between nanotube and gate electrode, source electrically connected with first end of nanotube, and drain electrically connected with second end of nanotube. Each nanotube is grown by chemical vapour deposition accelerated with catalyst platform mounted in foundation of elongated passage formed between washer and gate electrode.
EFFECT: allows for application of technology compatible to die mass production technology.
37 cl, 13 dwg
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