FIELD: technological processes.
SUBSTANCE: invention relates to devices for growing crystals of metal chalcogenides: ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, vertical zone melting performed by moving crucible through fixed heater. Graphite crucible consists of a body and cover 1, having the possibility of movement inside the body at change of level of melt 5, at that the depth of cover 1 movement in the body is limited at the specified height due to reduction of the inner diameter of the body in its lower part 3.
EFFECT: technical result of the invention consists in exclusion of thermal shocks in the process of growing crystals to prevent their cracking by stopping movement of the cover in a predetermined place, as a result of which there is a gap between the crystal and the cover.
1 cl, 4 dwg
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