FIELD: semiconductor materials.
SUBSTANCE: invention relates to semiconductor material field and can be used in nanotechnologies associated with the use of nanopowders. Preparation of zinc-cadmium telluride Cd0.9Zn0.1Te nanopowders is conducted via gas phase precipitation in a helium flow. Vaporization source has following composition: Cd0.5Zn0.5Te and is operated at temperature 800-850°C, while precipitation zone temperature is 540-610°C and helium flow velocity should be within a range of 1000 to 1500 mL/min. Thus prepared Cd0.9Zn0.1Te nanopowder has particle size 10 nm in its prevailing fraction.
EFFECT: optimized preparation parameters.
1 dwg, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF PREPARING ZINC SELENO-TELLURIDE NANOPOWDER | 2010 |
|
RU2415805C1 |
| METHOD FOR PRODUCING THREE-DIMENSIONAL MATERIAL OF ZINC-CADMIUM TELLURIDE BY COLD PRESSING | 2006 |
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RU2808903C1 |
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|
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| METHOD OF PRODUCTION OF OPTICAL FILTER | 2006 |
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| METHOD OF MANUFACTURING BASE LAYERS OF FLEXIBLE PHOTO-ELECTRICAL CONVERTERS BASED ON CDTE IN QUASI-CLOSED VOLUME | 2017 |
|
RU2675403C1 |
| PROCEDURE FOR GROWTH OF CdZnTe BY METHOD OF AHF (AXIAL HEAT FRONT), WHERE 0≤x≤1 OF DIAMETRE TO 150 mm | 2009 |
|
RU2434976C2 |
| METHOD OF POLYCRYSTALLINE CADMIUM TELLURIDE BLOCK PRODUCTION | 0 |
|
SU1791425A1 |
