FIELD: technological processes.
SUBSTANCE: invention relates to devices for growing crystals on seed using Bridgman methods, vertical zone melting, temperature gradient, as well as their modifications. Crucible consists of housing 1 and shank 2 with inoculating chamber 3, made in form of through hole in shank, closed by plug 4, having threaded connection with shank 2.
EFFECT: technical result consists in simplification of design, allowing for marking and drilling of seeding chamber from outer side of crucible, installation of seed manually, regardless of size of crucible, and also extracting crystal without detachment from seed.
1 cl, 2 dwg
Title | Year | Author | Number |
---|---|---|---|
DEVICE FOR CRYSTAL GROWTH BY VERTICAL BRIDGMAN METHOD | 2019 |
|
RU2698830C1 |
METHOD FOR GROWING SINGLE CRYSTALS OF TRINARY COMPOUND OF ZINC, GERMANIUM AND PHOSPHORUS | 2023 |
|
RU2813036C1 |
METHOD OF GROWING MONOCRYSTALS-SCINTILLATORS BASED ON SODIUM IODIDE OR CAESIUM IODIDE AND DEVICE FOR IMPLEMENTING METHOD | 2006 |
|
RU2338815C2 |
METHOD FOR GROWING HIGH-TEMPERATURE MONOCRYSTALS BY SINELNIKOV-DZIOV'S METHOD | 2016 |
|
RU2626637C1 |
CRYSTAL GROWING METHOD AND APPARATUS FOR PERFORMING THE SAME | 2006 |
|
RU2320791C1 |
THERMAL UNIT OF THE PLANT FOR GROWING FLUORIDE CRYSTALS WITH CLOSE MELTING TEMPERATURES BY VERTICAL DIRECTIONAL CRYSTALLIZATION | 2021 |
|
RU2778808C1 |
METHOD OF GROWING MONOCRYSTALLINE SAPPHIRE HEMISPHERICAL BLANKS | 1994 |
|
RU2078154C1 |
FACILITY FOR SINGLE CRYSTALS GROWING BY METHOD OF AXIAL HEAT CURRENT NEARBY SOLID-MELT INTERFACE | 2007 |
|
RU2357021C1 |
METHOD FOR GROWING MONOCRYSTALS OF SUBSTANCES WITH DENSITY EXCEEDING DENSITY OF THEIR MELT | 2015 |
|
RU2600381C1 |
METHOD OF CLEANING MELT SURFACE WHEN GROWING GERMANIUM MONOCRYSTALS | 2017 |
|
RU2641760C1 |
Authors
Dates
2020-03-11—Published
2019-09-16—Filed