METHOD OF EVALUATING RESISTANCE OF MICROELECTRONIC EQUIPMENT TO EXTERNAL ELECTROMAGNETIC ACTION Russian patent published in 2019 - IPC G01R31/00 

FIELD: test technology.

SUBSTANCE: invention relates to testing of electronic equipment, in particular to investigation of resistance of articles of microelectronics (electronic equipment) to action of electromagnetic fields of high and ultrahigh frequency, and can be used in taking measures to counteract artificial deliberate and unintentional interference created by radio engineering, electronic and electrical equipment for various purposes. Method of determining resistance of microelectronic equipment to effect of external electromagnetic fields of high frequency consists in the fact that the investigated object is exposed to external electromagnetic fields of high frequency by means of probing signal, recording the response of microelectronic equipment to the given action and assessing its resistance as per the response of the analyzed object. Prior to direct exposure of electromagnetic fields of high frequency to microelectronic equipment is carried out investigation of created by him pattern of electromagnetic fields by recording its own parasitic radiation in different polarisations; registration results are used to determine frequencies of peaks of intrinsic parasitic radiation of microelectronic equipment operating in normal mode. Further, microelectronic equipment is exposed to probing signal of external electromagnetic fields of high frequency at certain frequencies of peaks of intrusive parasitic radiation of microelectronic equipment; detecting the response of the analyzed object to the action of the probing signal on its higher harmonics; Amplitude of higher harmonics in output signal before its reduction is controlled, which indicates failure in operation of microelectronic equipment and enables to judge stability.

EFFECT: technical result consists in improvement of reliability of evaluation while providing technological effectiveness of evaluation, as well as reduced risk of output of analyzed microelectronic equipment failure.

1 cl, 2 dwg