METHOD AND APPARATUS FOR LOCALIZING A DEFECT SOURCE OF A THIN-LAYER SYSTEM DEPOSITED ON A SUBSTRATE Russian patent published in 2021 - IPC G02B1/10 G02B5/28 

FIELD: technological processes.

SUBSTANCE: invention relates to production of bases, in particular, transparent substrates made of glass or organic polymer material coated on at least one side with a system of thin layers. Disclosed method of localizing a defect source in a thin-layer system deposited on substrate (3) in deposition line (2) comprises a series of chambers (15-i), wherein each thin layer of material is deposited in one or more series chambers (15-i) of the deposition line, and garbage particles remaining on the surface of the thin layer deposited in the chamber, act as a mask during subsequent deposition of thin layers and are a source of defects. At that, said method includes stage (E10) of obtaining at least one image demonstrating said defect, obtained by at least one optical monitoring system, located at precipitation line output; determining stage (E20) of said defect feature from at least one image, wherein this feature comprises at least one representative characteristic of the defect; and step (E40) of identifying at least one deposition line camera, which can be a defect source, based on the defect feature and using reference features associated with the deposition line chambers.

EFFECT: technical result is the possibility of identifying a small number of deposition line cameras or even a single chamber, which can be a source of defects detected at the output of the deposition line.

23 cl, 16 dwg