DEVICE AND METHOD FOR PRECISION TRANSFER OF LAYERS OF ATOMICALLY THIN MATERIALS OF ANY AREA ONTO PLANAR SUBSTRATES Russian patent published in 2021 - IPC B32B37/02 B81C3/00 B82B3/00 B82Y40/00 B32B41/00 C01B32/182 

FIELD: physics.

SUBSTANCE: invention relates to precision manipulation and can be used to transfer layers of atomically thin materials, such as graphene, to planar substrates of any type with sufficient adhesion, including for creation of van der Waals heterostructures and hybrid devices based thereon. Device for transfer of layers 22 of atomically thin materials on planar substrates 21, comprising three-axis manipulator 6 with holder 8 and movable table 4, which are installed with possibility of movement relative to each other and are integrated with optical inverted microscope 3 with lens aperture of not less than 0.9, wherein manipulator 6 and microscope lens 12 are located on opposite sides of table 4, manipulator 6 has three translational and three rotational degrees of freedom with center of rotation, located in center of holder 8, holder 8 is equipped with heating element and its diameter is not less than 3 cm, and microscope 3 is equipped with high-accuracy system for measurement of distance and angle between holder 8 and table 4 in form of Michelson type interferometer. Method of layer 22 of atomically thin materials transfer to planar substrates 21 consists in that layer 22 applied on transparent plate 24, and substrate 21 are precisely mutually positioned in horizontal direction, and then brought into contact by vertical approach, after which layer 22 and substrate 21 are disconnected, wherein process of positioning and bringing into contact is visualized by means of lens 12 of microscope 3, substrate 21 is fixed on holder 8 and heated, and plate 24 with applied layer 22 is installed on fixed table 4 of inverted microscope 3 with numerical aperture of lens of not less than 0.9, positioning is carried out by interferometric measurement of distance between layer 22 and substrate 21 and calculation and correction of angle between them by turning holder 8 with substrate 21 relative to plate 24 with layer 22 due to rotational degrees of manipulator 6 freedom to form interference pattern corresponding to strict parallelism of planes of substrate 21 and transparent plate 24, and contacting is carried out by downward movement of heated and completely positioned in three directions on holder 8 of substrate 21.

EFFECT: invention enables the transfer layers atomically thin material area of 300 cm² on the planar substrate with an accuracy better than 500 nm and thus control the direction and speed of the transfer edge, which is critical for nanostructured substrates with topography nontrivial.

2 cl, 5 dwg