FIELD: physics.
SUBSTANCE: invention relates to radiation detectors, field-effect transistors, tunnel amplifiers with a stream of hot electrons, MDMDM tunnel structures for receiving millimeter and submillimeter wave radiation. Metal-Dielectric-Metal-Dielectric-Metal detector containing a metal conductor of the radiation absorber, contacts to this conductor made by placing a contact material through an insulator layer, characterized in that the metal conductor of the absorber is made in the form of a metal film with a thickness of 10-30 nm and a width of 0.1 -0.5 mcm and is separated from the metallic contact material of the outer thin-film electrodes by a tunnel barrier.
EFFECT: invention provides increased sensitivity, reduced noise, expanded dynamic range, expanded operating temperature range, increased reproducibility and manufacturability of such a device.
5 cl, 4 dwg
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Authors
Dates
2021-06-15—Published
2020-09-07—Filed