MULTIBARRIER HETEROSTRUCTURE FOR GENERATION OF POWERFUL ELECTROMAGNET RADIATION OF SUB- AND TERAHERTZ RANGES Russian patent published in 2013 - IPC H01S5/343 

FIELD: electricity.

SUBSTANCE: in a multibarrier heterostructure for generation of powerful electromagnet radiation of subterahertz and terahertz frequency ranges, representing a multilayer heterostructure from alternating layers of narrow-zone and wide-zone semiconductors, where the layer of the wide-zone semiconductor is an energy barrier ΔE_C for electrons from the narrow-zone layer, according to the invention, thicknesses d of heterolayers are selected from the condition $$\sqrt{D\tau }>d>\mathrm{30,}\text{nm}\text{, }$$ where D - coefficient of electron diffusion, and τ - time of relaxation of excessive thermal energy of electrons into a lattice; wide-zone (barrier) layers are not alloyed, and concentration of donors N_d in narrow-zone layers meets the condition of 10¹⁷ cm^-3≤N_d≤10¹⁸ cm^-3; height of energy barrier ΔE_C>6kT; quantity of alternating pairs of narrow-zone and wide-zone layers is n>4. Besides, the material of the wide-zone barrier layer in the first pair differs from all other, subsequent ones, and providing for lower height of the first energy barrier compared to the subsequent ones.

EFFECT: increased capacity and expanded frequency range of compact generators of terahertz radiation.

2 cl, 3 dwg