TECHNOLOGY FOR CREATING A MAGNETICALLY CONTROLLED MEMRISTOR BASED ON TITANIUM DIOXIDE NANOTUBES Russian patent published in 2021 - IPC H01L21/02 B82B1/00 

FIELD: electronics, data processing.

SUBSTANCE: invention relates to a method for manufacturing thin-film structures based on compounds containing bismuth and iron cations on the surface of nanoscale TiO₂ tubes and undoped YBa₂Cu₃O_6+х (YBCO), which have memristive properties sensitive depending on the applied external constant magnetic field, which can be used in the creation of functional devices of electronic technology, in particular in the manufacture of elements with different principles of recording, storing and processing information, including transistors, a new generation of memory cells (ferroelectric and memristive) and resistive hybrid structures containing superconducting and ferroelectric layers. The essence of the invention consists in a method for manufacturing thin-film structures of multiferroics, namely compounds with a perovskite structure containing bismuth and iron cations, on the surface of nanoscale TiO₂ tubes and not fully doped YBa₂Cu₃O_6+х (YBCO), having memristive properties sensitive to an external constant magnetic field, by atomic layer deposition, consisting in layer-by-layer deposition of organometallic precursors based on bismuth and iron, and subsequent heat treatment for no more than 1 hour at temperatures less than 600°C.

EFFECT: obtaining films with memristive properties sensitive to an applied external permanent magnetic field by layer-by-layer application of organometallic precursors based on bismuth and iron, and subsequent heat treatment for no more than 1 hour and at temperatures less than 600°C.

1 cl, 7 dwg