FIELD: chemistry.
SUBSTANCE: invention relates to application of thin dielectric films in micro- and nano-electronic devices, using non-conventional materials, specifically FeRAM, i.e. ferroelectric random access memory with destructive readout method with its tough requirements for capacity, retention time and power consumption. The invention relates to atomic layer deposition of thin hafnium and zirconium oxide film from hafnium and zirconium metalorganic precursors Hf[N(CH3)(C2H5)]4 (TEMAH) and Zr[N(CH3)(C2H5)]4 (TEMAZ) onto the base electrode, using a mix of two metalorganic compounds TEMAH and TEMAZ, supplied from a common heated container.
EFFECT: improved electrophysical characteristics of ferroelectric condencer.
2 cl, 3 dwg, 4 ex
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