METHOD OF PRODUCING EPITAXIAL BISMUTH FERRITE FILMS BY MOLECULAR LAYERING Russian patent published in 2020 - IPC C04B41/87 C04B35/26 C23C18/12 

FIELD: chemistry.

SUBSTANCE: invention relates to thin-film production of multiferroics, particularly, to production of nano-sized bismuth ferrite films, which have multiferroic properties at room temperature, and can be used in production of data recording, storage and processing devices, including spintronics devices. Method involves preparing a ferrite film of bismuth on the surface of the r-plane of a sapphire substrate by molecular layering using organometallic compounds of bismuth-containing and iron-containing precursors followed by annealing in an air atmosphere at temperature of 630–670 °C for 1 hour at normal atmospheric pressure.

EFFECT: technical result consists in simplifying the technology of molecular layering of nano-size epitaxial layers of BiFeO₃ multiferroic and improving quality of obtained films.

1 cl, 1 ex, 3 dwg