FIELD: microwave technology.
SUBSTANCE: invention relates to the microwave technology, in particular to microwave generators on transistors. The low-noise microwave generator contains a bipolar transistor, the first segment of the microstrip line (MSL), the second segment of the MSL, a control varicap located on a dielectric substrate with a metallization layer, a phase-locked loop (PLL), a high-frequency cylindrical resonator, the third segment of the MSL, a frequency tuning unit made in the form of an electromagnet with an elastic membrane, and in the PLL device circuit, the output of the reference quartz generator is connected to the input of a low-noise signal power amplifier, frequency multiplier of the signal of a quartz generator with a high multiplication factor, a microwave band-pass filter, a microwave frequency mixer, the first frequency divider, a frequency-phase detector, the first operational amplifier with a low-pass filter in the feedback circuit, a varicap of the microwave generator, a reference quartz generator, a second frequency divider, a second operational integrating amplifier with a large time constant, a control solenoid of an electromagnet of a frequency tuning device.
EFFECT: improvement of low-noise microwave generators.
1 cl, 4 dwg
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Authors
Dates
2021-10-28—Published
2020-12-16—Filed