LOW-NOISE MICROWAVE OSCILLATOR Russian patent published in 2000 - IPC

Abstract RU 2161367 C1

FIELD: electronic engineering. SUBSTANCE: oscillator has bipolar transistor, first, second, and third microstrip line sections, control varicap all mounted on metallized insulating substrate; phase-locked loop unit, high-Q cylindrical resonator in the form of cavity or screen-housed dielectric resonator electromagnetically coupled with first microstrip section through slit; first output of PLL unit is connected to first lead of control varicap, second output, to frequency control unit made in the form of electromagnet and mounted on other end surface of resonator which is, essentially, double-layer flexible diaphragm free to bend down under action of electromagnet core. One layer of diaphragm that limits resonator space is made of metal and second one arranged between first layer and electromagnet body is, essentially, grease of grade TsIATIM or the like. EFFECT: reduced frequency noise mainly caused by mechanical vibrations of diaphragms. 2 cl, 6 dwg

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RU 2 161 367 C1

Authors

Eshtokin V.N.

Kotov A.S.

Rusakova A.K.

Dates

2000-12-27Published

1999-12-15Filed