LOW-NOISE MICROWAVE OSCILLATOR Russian patent published in 1996 - IPC

FIELD: microwave oscillators built around transistors. SUBSTANCE: oscillator has bipolar transistor whose base lead is grounded, insulating substrate metallized on one side, high-quality resonator, control varicap. First microstrip stub is connected to bipolar transistor emitter and second microstrip stub, to collector of this transistor. Third microstrip stub is connected to first one and is open at end; second microstrip stub is electromagnetically coupled with high-quality resonator through slit made in substrate metallized layer perpendicular to second microstrip stub and resonator axis along its radius. Fourth microstrip stub open at end is connected to second microstrip stub. 50-Ohm matched resistor is connected to point of connection of first and third microstrip stubs. EFFECT: reduced noise. 3 dwg