PURIFIED SILICON, AS WELL AS DEVICES AND SYSTEMS FOR ITS PRODUCTION Russian patent published in 2022 - IPC C01B33/37 B01D15/02 B01J8/20 B01J8/24 

FIELD: electrical engineering.

SUBSTANCE: invention can be used in the production of semiconductors and photoelements. A device for silicon purification contains a tank with an upper end, an opposite lower end and a sidewall passing between opposite ends and forming a chamber, and a hole for inputting silicon in the upper part of the tank to input melted silicon to the chamber. The hole for introducing silicon contains a set of separate pipes for supplying silicon. The device also contains a gas injection structure in the lower part of the tank with a set of holes for inputting oxygen-containing gas in the form of bubbles to the chamber. The gas injection structure contains a sleeve and a set of pins passing radially from the sleeve, each of which has a set of gas holes. A countercurrent exchange section is located between the hole for inputting silicon and the gas injection structure.

EFFECT: invention allows for reducing energy costs for the production of silicon of high purity.

10 cl, 20 dwg