METHOD FOR OBTAINING SILICON CARBIDE Russian patent published in 2022 - IPC C01B32/977 C04B35/575 B82B3/00 B82Y40/00 

FIELD: silicon carbide production.

SUBSTANCE: nvention relates to a technology for producing silicon carbide, which can be used for the production of semiconductor products, jewelry, ceramic materials and catalyst carriers. The method for producing silicon carbide includes preparing a charge from silicon-containing and carbon-containing components, loading the charge and heating the charge, while an organosilicon compound - an ester of orthosilicic acid and ethyl alcohol with the formula (C₂H₅O)₄Si is used as a silicon-containing component, an aqueous solution of sucrose is used as a carbon-containing component in quantity, providing in the charge the ratio of carbon/silicon by weight from 1.30:1 to 1.39:1, the preparation of the mixture is carried out in the following ratio, wt. hours: ester of orthosilicic acid and ethyl alcohol 100, aqueous ammonia 25% solution 100, sucrose 72-77, water 110, while heating the mixture is carried out to 1600-1700°C in vacuum up to 1.33 Pa with exposure for 1- 2 hours

EFFECT: invention makes it possible to obtain nanosized silicon carbide with a purity of 99.99% and a yield of up to 99.5% from inexpensive, non-deficient and environmentally friendly substances.

1 cl, 1 dwg, 1 tbl, 5 ex