METHOD FOR OBTAINING SILICON CARBIDE Russian patent published in 2023 - IPC C01B32/963 C30B29/36 B82Y40/00 

FIELD: silicon carbide production.

SUBSTANCE: invention relates to the production of silicon carbide, which can be used to produce ceramics, abrasive tools, high-temperature heating elements and catalysts. Silicon carbide production method includes preparation of charge from silicon-containing and carbon-containing components, loading of charge and heating of charge. Silicic acid H₂SiO₃ is used as a silicon-containing component. As a carbon-containing component, silicon production waste is used - a carbon-containing raw material, including microsilica. In this case, the mass ratio of carbon to silicon is maintained from 1.25:1 to 1.3:1. The mass ratio of carbon to silicon in the carbonaceous feedstock is from 2.17:1 to 2.64:1. After preparing the charge, it is heat treated in a vacuum furnace at a pressure of 0.030 to 0.040 technical atmospheres and a temperature of 1450 to 1650 °C for 1 to 2 hours.

EFFECT: invention makes it possible to increase the yield of silicon carbide and its purity, reduce the duration of heat treatment, and simplify the technological process.

1 cl, 1 dwg, 5 ex