METHOD OF PRODUCING SILICON CARBIDE Russian patent published in 2018 - IPC C01B31/36 C04B35/565 C04B35/573 C04B35/632 B82B3/00 

FIELD: chemistry.

SUBSTANCE: silicon carbide is obtained from a charge comprising nanopowder of silicon-containing (SiO, SiO₂, H₂SiO₃) carbon-containing (a carbohydrate of the general formula C_n(H₂O)_m, where n ≥12; m=n-1, a polyhydric alcohol of the general formula C_nH_2n+2O_n, where n≥2, aldehyde or ketone derivatives of polyhydric alcohols of the general formula (CH₂O)n, where n≥3, components, prepared in deionized water, with the subsequent stepwise heating in three stages: up to a temperature of 145-195°C with the maintaining for 1.5-3 hours, up to 800-1000°C, with the maintaining for 0.4-1 h, and up to 1450-1650°C, with the maintaining for 1-1.5 hours.

EFFECT: increasing the purification degree and the yield product of the order of 80-85% 3 etc.

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