SIGNAL SIMULATOR OF BRIDGE STRAIN SENSORS Russian patent published in 2022 - IPC G01R17/00 G01R35/00 H01C10/16 

Abstract RU 2772738 C1

FIELD: measuring technology.

SUBSTANCE: invention relates to measuring technology and is intended to simulate the signals of bridge strain gauge sensors when conducting metrological studies and calibrating high-speed measuring systems in automatic mode. The substance of the proposed solution lies in the fact that the signal simulator of bridge strain-gauge sensors, containing two switches, the outputs of which are the measuring outputs of the simulator, and a resistor bridge, consisting of two parallel-connected circuits of series-connected resistors, the first and last of which in each circuit are basic resistors , which are connected with their outputs to the power inputs of the bridge, and the remaining resistors of the circuit are additional, while the first circuit includes an even number of m-1 additional resistors with equal resistances, and the second circuit includes an even number of n-1 additional resistors with equal resistances, m outputs of the first circuit between the base resistances are connected to the corresponding inputs of the first switch, and n outputs of the second circuit between the base resistances are connected to the corresponding inputs of the second switch, additionally the resistance of each additional resistor of the second circuit is m times greater than each resistance of the additional resistor of the first circuit, the resistances of the base resistors of the first circuit differ from the resistances of the base resistors of the second circuit and are selected from the condition of equality of the resistances of each arm of the simulator's resistor bridge to the nominal resistance of each strain gauge of the simulated bridge sensor.

EFFECT: expanding the functionality of the bridge strain gauge signal simulator by generating voltage increments equal in absolute value at each stage of the simulator and ensuring the specified accuracy of reproduction of the voltage stages of the simulator.

1 cl, 1 tbl, 1 dwg

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RU 2 772 738 C1

Authors

Balunov Kirill Andreevich

Vityutin Gennadij Andreevich

Zagidullin Shamil Magamedovich

Zubov Evgenij Georgievich

Likhachev Mikhail Yurevich

Tsaplev Yurij Nikolaevich

Dates

2022-05-25Published

2021-08-20Filed