FIELD: materials processing.
SUBSTANCE: invention relates to the processing of materials and can be used to increase the bulk electrical conductivity of oxide ferroelectric materials, in particular lithium niobate and lithium tantalate. Method for restorative annealing of plates from oxide ferroelectric material includes carrying out restorative annealing in a furnace of plates from oxide ferroelectric material in an oxygen-free atmosphere, while plates from lithium niobate LiNbO3 or lithium tantalate LiTaO3 are used as plates from oxide ferroelectric material, before annealing in the working chamber of the furnace at a distance of 0.2 to 1 mm, symmetrically above and below the plates of oxide ferroelectric material, silicon wafers with a thickness of 0.25 to 1 mm are placed, after which annealing is carried out, while exposure during annealing of lithium niobate plates LiNbO3 is carried out in a temperature range of 600-1140οC, and exposure during annealing of lithium tantalate plates LiTaO3 is carried out at a temperature of 600οC.
EFFECT: increasing the efficiency of increasing the bulk electrical conductivity, reducing the recovery annealing time and reducing the requirements for the quality of the recovery annealing atmosphere (residual pressure of the atmosphere up to 2 Pa, without additional control of the amount of oxygen and water vapor) in the absence of doping of the ferroelectric material.
3 cl, 5 ex, 1 dwg
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Authors
Dates
2022-08-12—Published
2021-12-23—Filed