FIELD: electrical engineering.
SUBSTANCE: invention relates to electrical engineering and can be used in power electronics to improve the reliability of 310 V DC supply circuits when operating on an inductive load. The effect is achieved due to the fact that in the circuit of the prototype the driver of the "lower shoulder" IR2121 was replaced with a symmetrical trigger assembled on the basis of high-voltage MOSFET transistors STF12N120K5 (drain-source breakdown voltage 1200 V), which control the operation of the high-voltage power MOSFET transistor STW12N150K5 (breakdown voltage drain-source 1500 V).
EFFECT: developed device is capable of protecting 310 V DC supply circuits from short circuits when operating on an inductive load with a speed that is 25% faster than the prototype. In addition, the device is able to protect DC power circuits up to 1000 V from short circuit when operating on a resistive load.
1 cl, 1 dwg
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Authors
Dates
2022-08-22—Published
2022-01-20—Filed