FIELD: machine building.
SUBSTANCE: invention can be used for fast switching on of power transistor. Substance of invention consists in that method of fast switching-on of power transistor with insulated gate includes grounding of gate and supply to source or emitter of opening pulse of current of nanosecond duration.
EFFECT: technical result is enabling improvement of mass and dimensions parameters of pulse power sources and reduction of energy losses.
2 cl, 3 dwg
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