METHOD FOR MEASURING TRIPPING TIME OF ELECTRONIC FUSE Russian patent published in 2023 - IPC G04F10/02 

FIELD: electrical engineering.

SUBSTANCE: invention can be used in power electronics to improve the reliability of operation and protect power MOSFET transistors in 310 V DC power circuits from short circuit currents. The technical result is achieved by replacing the operating mode of the bistable multivibrator on transistors VT3 and VT4 with the mode of a pulse generator with external synchronization. The gate of transistor VT7 is connected to the gate of transistor VT6, the source of transistor VT7 is connected to the gate of transistor VT4, the drain of transistor VT7 is connected to the common wire. By simulating a short-circuit mode, an oscillatory process with a frequency f occurs in the circuit, the oscillation period of which is equal to twice the shutdown time of the electronic fuse. The oscillation frequency is measured with a multimeter, and the frequency (shutdown time) is adjusted using resistor R12.

EFFECT: improving the reliability of operation and protect power MOSFET transistors in 310 V DC power circuits from short circuit currents.

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