FIELD: instrumentation.
SUBSTANCE: method for producing an infrared photoresistor based on a CdSxSe1-x crystal, characterized in that alloying impurities Cu, Ce and Sb are simultaneously applied to the CdSxSe1-x crystal by electrolysis, which is then subjected to thermal ignition at t =800±50°C, thereby achieving a higher volt-watt sensitivity (about 105 V/W) to light from the near spectral region of infrared radiation. The photosensitivity of the photoresistor obtained by this method is maintained at up to 140°C.
EFFECT: photoresistor can be used in optoelectronic devices, such as an uncooled high-temperature receiver of the near spectral range of IR radiation.
1 cl, 4 dwg
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|---|---|---|---|
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