FIELD: computing technics.
SUBSTANCE: infrared resistor based on a CdS single crystal is notable for using a CdS single crystal simultaneously doped with Cu, Ce and Sb impurities by means of electrolysis from a solution of Cu, Ce and Sb chlorides in a standard, with the addition of HCl and with further annealing. A photoresistor based on a CdS single crystal simultaneously doped with Cu, Ce and Sb impurities has a high photosensitivity, wherein the photosensitivity remains up to 130°C due to the use of a multicomponent technology of doping from surface layers by thermal annealing.
EFFECT: invention can be used in optoelectronic apparatuses as an uncooled high-temperature receiver of near-infrared emission.
1 cl, 3 dwg
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