MICROWAVE ATTENUATOR Russian patent published in 2022 - IPC H01P1/24 

FIELD: microwave technology.

SUBSTANCE: invention relates to microwave technology. The microwave attenuator contains a dielectric substrate, on the lower surface of which a metallized coating is applied, connected to a common body, and a resistive film having a rectangular shape and a constant value of surface resistance is deposited on the upper surface. In this case, the lower side of the resistive film is connected along the entire length to the common body through a metallized coating deposited on the lower side of the upper surface of the dielectric substrate and connected to the metallized coating deposited on the lower end of the dielectric plate and connected to the metallized coating of the lower surface of the dielectric substrate. Input and output microstrips, respectively, are connected to the sides of the resistive film on the opposite side from the junction with the metallized coating. In the lower part of the resistive film, an internal rectangular cutout is made, the width of which is twice the width of the input microstrip.

EFFECT: reducing the unevenness of the amplitude-frequency characteristic (AFC) in a wide band of operating frequencies.

1 cl, 6 dwg