MICROSTRIP LOAD Russian patent published in 2018 - IPC H01P1/24 

FIELD: radio engineering and communications.

SUBSTANCE: invention relates to radio engineering and can be used in broadband microwave devices as an end-matched load of a high power level. Microstrip load contains a dielectric substrate on one side of which a metallized base is located, and on the other side there is an input microstrip transmission line, a capacitor and absorbing resistive films with the same dimensions and surface resistance between which the inductors are connected. End of the last absorbing resistive film is the end of the microstrip load and is connected to the metallized base, and a capacitor is connected between the input microstrip transmission line and the metallized base. In the device according to the invention, the inductance values of the inductors are selected in such a way that together with the parasitic capacitances of the absorbing resistive films they form low-pass filters with Chebyshev approximation of amplitude-frequency characteristics, which ensures high quality of matching throughout the band of operating frequencies, including in the low frequency region.

EFFECT: invention provides an improvement in matching in the low frequency region while maintaining the maximum permissible power level of the input high-frequency signal.

1 cl, 3 dwg