FIELD: systems of optical processing of information, sensors and converters of magnetic fields. SUBSTANCE: given magnetooptical thin-film structure includes substrate 1 of monocrystal of gadolinium-gallium iron garnet, film 2 deposited on substrate of bismuth-carrying gallium iron garnet with magnetization vector 3 lying in plane of film. Crystallographic axis [ 100 ] 5 of monocrystal of substrate 1 is displaced relative to perpendicular 4 to plane of substrate 1 by angle that does not exceed value of deviation towards crystallographic axis [ 210 ] 6, preferably within limits from 0 to 4 deg. Bismuth-carrying iron garnet is doped with mainly thulium, gadolinium, lutecium or with their combinations. EFFECT: expanded application field and increased functional reliability. 3 dwg
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