FIELD: chemistry.
SUBSTANCE: invention relates to the technology of producing epitaxial films of ferro-garnets and can be used in magneto-optics, spintronics and magnonics. First, a mixture is prepared, consisting of a mechanical mixture of garnet-forming oxides, polycrystalline ferro-garnet and solvent oxides, which are represented by oxides of lead, boron and bismuth: PbO, B2O3, Bi2O3, taken in mol.% ratio PbO+B2O3/Bi2O3=1.9±0.2. Polycrystalline component used is bismuth-substituted ferro-garnet with bismuth content less than the limit of thermodynamic stability of ferro-garnet. Then said components are melted and solution-melt is homogenised at temperature of 1365-1375 K for 3-4 hours. Temperature of the solution-melt is reduced to a saturation point and epitaxial films are grown on a substrate of gadolinium-gallium garnet Gd3Ga5O12 with orientation of 100.
EFFECT: obtained epitaxial films of bismuth-substituted ferro-garnets have a defect-free crystalline structure and are characterized by high specific Faraday rotation – up to 8⋅104 deg/cm, at content of bismuth is less than limit of thermodynamic stability of ferro-garnet.
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Authors
Dates
2025-03-31—Published
2024-12-24—Filed