FIELD: memory elements.
SUBSTANCE: invention relates to an electrically controlled memory element, in which the memory material is an aluminium film deposited on a means for controlling the energy mode of the memory material, made in the form of a silicon substrate, the contacts for supplying an electrical signal are installed on opposite sides of the memory element, the reader is made in the form of an IR sensor, as well as methods for writing and reading the information state on the memory material of this memory element.
EFFECT: manufacture of a memory element that provides greater durability during cyclic recording and erasing of the information state of the memory element due to thermal data storage; simplification of the method of reading and writing the information state of the memory element.
8 cl, 17 dwg
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